The modeling of gate delays has always been one of the most difficult and market-sensitive works. In submicron designs, the second-order effects such as the input-to-output coupling capacitance have a significant influence on gate delay as shown in this paper. However, the accurate analysis of the input-to-output coupling capacitance effect has not been presented in previous research. In this paper, an analytical model for the influence of the input-to-output coupling capacitance on CMOS inverter delay is proposed, in which a novel algorithm for computing overshooting time is given. Experimental results show good agreement with Spice simulations.

The pseudo-transient method is discussed in this paper as one of practical methods to find DC operating points of nonlinear circuits when the Newton-Raphson method fails. The mathematical description for this method is presented and an effective pseudo-transient algorithm utilizing compound pseudo-elements is proposed. Numerical examples are demonstrated to prove that our algorithm is able to avoid the oscillation problems effectively and also improve the simulation efficiency.

Analog multipliers are one of the most important building blocks in analog signal processing circuits. The performance with high linearity and wide input range is usually required for analog four-quadrant multipliers in most applications. Therefore, a highly linear and wide input range four-quadrant CMOS analog multiplier using active feedback is proposed in this paper. Firstly, a novel configuration of four-quadrant multiplier cell is presented. Its input dynamic range and linearity are improved significantly by adding two resistors compared with the conventional structure. Then based on the proposed multiplier cell configuration, a four-quadrant CMOS analog multiplier with active feedback technique is implemented by two operational amplifiers. Because of both the proposed multiplier cell and active feedback technique, the proposed multiplier achieves a much wider input range with higher linearity than conventional structures. The proposed multiplier was fabricated by a 0.6 µm CMOS process. Experimental results show that the input range of the proposed multiplier can be up to 5.6Vpp with 0.159% linearity error on VX and 4.8Vpp with 0.51% linearity error on VY for 2.5V power supply voltages, respectively.

Floating dummy metal fills inserted for planarization of multi-dielectric layers have created serious problems because of increased interconnect capacitance and the enormous number of fills. We present new dummy filling methods to reduce the interconnect capacitance and the number of dummy metal fills needed. These techniques include three ways of filling: 1) improved floating square fills, 2) floating parallel lines, and 3) floating perpendicular lines (with spacing between dummy metal fills above and below signal lines). We also present efficient formulas for estimating the appropriate spacing and number of fills. In our experiments, the capacitance increase using the conventional regular square method was 13.1%, while that using the methods of improved square fills, extended parallel lines, and perpendicular lines were 2.7%, 2.4%, and 1.0%, respectively. Moreover, the number of necessary dummy metal fills can be reduced by two orders of magnitude through use of the parallel line method.

This paper proposes a 15-bit 10-MS/s pipelined ADC based on the incomplete settling principle. The traditional complete settling stage is improved to the incomplete settling structure through dividing the sampling clock of the traditional stage into two parts for discharging the sampling and feedback capacitors and completing the sampling, respectively. The proposed ADC verifies the correction and validity of optimizing ADCs' conversion speed without additional power consumption through the incomplete settling. This ADC employs scaling-down scheme to achieve low power dissipation and utilizes full-differential structure, bottom-plate-sampling, and capacitor-sharing techniques as well as bit-by-bit digital self-calibration to increase the ADC's linearity. It is processed in 0.18 µm 1P6M CMOS mixed-mode technology. Simulation results show that 82 dB SNDR and 87 dB SFDR are obtained at the sampling rate of 10 MHz with the input sine frequency of 100 kHz and the whole static power dissipation is 21.94 mW.

A CMOS bandgap reference circuit without resistors, which can successfully operate under 1V supply voltage is proposed. The improvement is realized by the technique of the voltage divider and a new current source. The most attractive merit is that the proposed circuit breaks the bottleneck of low supply voltage design caused by the constant bandgap voltage value (1.25V). Moreover, the temperature coefficient of the reference voltage Vref is improved by compensating the temperature dependence caused by the current source. The simulation results using a standard CMOS 0.18 um process show that the value of Vref can be achieved around 0.5 V with a minimum supply voltage of 0.85 V. Meanwhile, the temperature coefficient of the output voltage is only 3.5ppm/°C from 0 °C to 70 °C.

Finding DC operating-points of nonlinear circuits is an important and difficult task. The Newton-Raphson method employed in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. The fixed-point homotopy method is one of the excellent methods. However, from the viewpoint of implementation, it is important to study it further so that the method can be easily and widely used by many circuit designers. This paper presents a practical method to implement the fixed-point homotopy method. A special circuit called the solution-tracing circuit for the fixed-point homotopy method is proposed. By using this circuit, the solution curves of homotopy equations can be traced by performing the SPICE transient analysis. Therefore, no modification to the existing programs is necessary. Moreover, it is proved that the proposed method is globally convergent. Numerical examples show that the proposed technique is effective and can be easily implemented. By the proposed technique, many SPICE users can easily implement the fixed-point homotopy method.

We present a practical method of dealing with the influences of floating dummy metal fills, which are inserted to assist planarization by chemical-mechanical polishing (CMP) process, in extracting interconnect capacitances for system-on-chip (SoC) designs. The method is based on reducing the thicknesses of dummy metal layers according to electrical field theory. We also clarify the influences of dummy metal fills on the parasitic capacitance, signal delay, and crosstalk noise. Moreover, we address that interlayer dummy metal fills have more significant influences than intralayer ones in terms of the impact on coupling capacitances. When dummy metal fills are ignored, the error of capacitance extraction can be more than 30%, whereas the error of the proposed method is less than about 10% for many practical geometries. We also demonstrate, by comparison with capacitance results measured for a 90-nm test chip, that the error of the proposed method is less than 8%.

We have proposed a random curved surface model as a new mathematical concept which enables the expression of spatial correlation. The model gives us an appropriate methodology to deal with the systematic components of device variation in an LSI chip. The key idea of the model is the fitting of a polynomial to an array of Gaussian random numbers. The curved surface is expressed by a new extension from the Legendre polynomials to form two-dimensional formulas. The formulas were proven to be suitable to express the spatial correlation with reasonable computational complexity. In this paper, we show that this approach is useful in analyzing characteristics of device variation of actual chips by using experimental data.

In deep submicron designs, the interconnect wires play a major role in the timing behavior of logic gates. The effective capacitance Ceff concept is usually used to calculate the delay of gate with interconnect loads. In this paper, we present a new method of Integration Approximation to calculate Ceff. In this new method, the complicated nonlinear gate output is assumed as a piecewise linear (PWL) waveform. A new model is then derived to compute the value of Ceff. The introduction of Integration Approximation results in Ceff being insensitive to output waveform shape. Therefore, the new method can be applied to various output waveforms of CMOS gates with RC-π loads. Experimental results show a significant improvement in accuracy.

With the scaling of CMOS technology into the nanometer regime, the overshooting effect is more and more obvious and has a significant influence to gate delay and power consumption. Recently, researchers have already proposed the overshooting effect models for an inverter. However, the accurate overshooting effect model for multiple-input gates is seldom presented and the existing technology to reduce a multiple-input gate to an inverter is not useful when modeling the overshooting effect for multiple-input gates. Therefore, modeling the overshooting effect for multiple-input gates is proposed in this paper. Firstly, a formula-based model is presented for the overshooting time of 2-input NOR gate. Then, more complicated methods are given to calculate the overshooting time of 3-input NOR gate and other multiple-input gates. The proposed model is verified to have a good agreement, within 3.4% error margin, compared with SPICE simulation results using CMOS 32nm PTM model.

Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However, most previous studies are mainly focused on the bipolar transistor circuits and no paper presents the global convergence theorems of homotopy methods for MOS transistor circuits. Moreover, due to the improvements and advantages of MOS transistor technologies, extending the homotopy methods to MOS transistor circuits becomes more and more necessary and important. This paper proposes two nonlinear homotopy methods for MOS transistor circuits and proves the global convergence theorems for the proposed MOS nonlinear homotopy method II. Numerical examples show that both of the two proposed homotopy methods for MOS transistor circuits are more effective for finding DC operating points than the conventional MOS homotopy method and they are also capable of finding DC operating points for large-scale circuits.

A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potential-based MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

An energy management circuit is proposed for self-powered ubiquitous sensor modules using vibration-based energy. With the proposed circuit, the sensor modules work with low duty cycle operation. Moreover, a two-tank circuit as a part of the energy management circuit is utilized to solve the problem that the average power density of ambient energy always varies with time while the power consumption of the sensor modules is constant and larger than it. In addition, the long start-up time problem is also avoided with the timing control of the proposed energy management circuit. The CMOS implementation and silicon verification results of the proposed circuit are also presented. Its validity is further confirmed with a vibration-based energy generation. The sensor module is used to supervise the vibration of machines and transfer the vibration signal discontinuously. A piezoelectric element acts as the vibration-to-electricity converter to realize battery-free operation.

Simple closed-form expressions for efficiently calculating on-chip interconnect capacitances are presented. The formulas are expressed with second-order polynomial functions which do not include exponential functions. The runtime of the proposed formulas is about 2-10 times faster than those of existing formulas. The root mean square (RMS) errors of the proposed formulas are within 1.5%, 1.3%, 3.1%, and 4.6% of the results obtained by a field solver for structures with one line above a ground plane, one line between ground planes, three lines above a ground plane, and three lines between ground planes, respectively. The proposed formulas are also superior in accuracy to existing formulas.

Recently, the compound element pseudo transient analysis, CEPTA, method is regarded as an efficient practical method to find DC operating points of nonlinear circuits when the Newton-Raphson method fails. In the previous CEPTA method, an effective SPICE3 implementation algorithm was proposed without expanding the Jacobian matrix. However the limitation of step size was not well considered. Thus, the non-convergence problem occurs and the simulation efficiency is still a big challenge for current LSI nonlinear cicuits, especially for some practical large-scale circuits. Therefore, in this paper, we propose a new SPICE3 implementation algorithm and an embedding algorithm, which is where to insert the pseudo capacitors, for the CEPTA method. The proposed implementation algorithm has no limitation for step size and can significantly improve simulation efficiency. Considering the existence of various types of circuits, we extend some possible embedding positions. Numerical examples demonstrate the improvement of simulation efficiency and convergence performance.